Photoluminescence measurements on erbium-doped silicon
نویسندگان
چکیده
منابع مشابه
Photoluminescence properties of erbium doped InGaN epilayers
We report on the photoluminescence properties of erbium Er doped InxGa1−xNa epilayers synthesized by metal organic chemical vapor deposition. The crystalline quality and surface morphology of Er doped In0.05Ga0.95N were nearly identical to those of Er doped GaN. The photoluminescence intensity of the 1.54 m emission in Er doped In0.05Ga0.95N was an order of magnitude lower than in Er doped GaN ...
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Microcrystalline silicon thin films doped with erbium were produced by RF sputtering and their structural, chemical and optical properties were studied by X-ray diffractometry at grazing incidence, Rutherford back scattering and optical transmission spectroscopy. The samples exhibit a sharp photoluminescence (PL) spectrum from the Er centres with the strongest peak positioned at 1.536 m with a...
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Optical fiber tapers are used to collect photoluminescence emission at approximately 1.5 microm from photonic crystal cavities fabricated in erbium doped silicon nitride on silicon. In the experiment, photoluminescence collection via one arm of the fiber taper is enhanced 2.5 times relative to free space collection, corresponding to a net collection efficiency of 4%. Theoretically, the collecti...
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We demonstrate monolithic 160-µm-diameter rare-earth-doped microring lasers using silicon-compatible methods. Pump light injection and laser output coupling are achieved via an integrated silicon nitride waveguide. We measure internal quality factors of up to 3.8 × 105 at 980 nm and 5.7 × 105 at 1550 nm in undoped microrings. In erbium- and ytterbium-doped microrings we observe single-mode 1.5-...
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ژورنال
عنوان ژورنال: Semiconductor Science and Technology
سال: 1995
ISSN: 0268-1242,1361-6641
DOI: 10.1088/0268-1242/10/5/016